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PHB6N50E

NXP
Part Number PHB6N50E
Manufacturer NXP
Description Transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanc...
Datasheet PDF File PHB6N50E PDF File

PHB6N50E
PHB6N50E

Overview
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP6N50E, PHB6N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 5.
9 A RDS(ON) ≤ 1.
5 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The PHP6N50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB6N50E...


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