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PHB6N60E

NXP
Part Number PHB6N60E
Manufacturer NXP
Description Transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanc...
Datasheet PDF File PHB6N60E PDF File

PHB6N60E
PHB6N60E

Overview
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP6N60E, PHB6N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 5.
4 A RDS(ON) ≤ 1.
8 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The PHP6N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB6N60E is supplied in the SOT404 surface mounting package.
PINNING PIN 1 2 3 tab gate drain 1 source DESCRIPTION SOT78 (TO220AB) tab SOT404 tab 2 drain 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN.
- 55 MAX.
600 600 ± 30 5.
4 3.
4 21 125 150 UNIT V V V A A A W ˚C December 1998 1 Rev 1.
300 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy CONDITIONS PHP6N60E, PHB6N60E MIN.
- MAX.
341 UNIT mJ EAR IAS, IAR Unclamped inductive load, IAS = 4.
4 A; tp = 0.
2 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 5.
4 A; tp = 2.
5 µs; Tj prior to avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V; refer to fig:18 Repetit...


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