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PHB6ND50E

NXP
Part Number PHB6ND50E
Manufacturer NXP
Description Transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES • Repetitiv...
Datasheet PDF File PHB6ND50E PDF File

PHB6ND50E
PHB6ND50E

Overview
Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode PHP6ND50E, PHB6ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.
9 A g RDS(ON) ≤ 1.
5 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).
This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor contr...


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