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MA714

Panasonic
Part Number MA714
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA4X714 Silicon epitaxial planar type Unit : mm For switching circuits For wave detectio...
Datasheet PDF File MA714 PDF File

MA714
MA714

Overview
Schottky Barrier Diodes (SBD) MA4X714 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit • Two MA3X704As are contained in one package (Two diodes in a different direction) • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.
9 − 0.
05 2.
8 − 0.
3 0.
65 ± 0.
15 1.
5 − 0.
05 + 0.
25 + 0.
2 0.
65 ± 0.
15 1.
9 ± 0.
2 0.
95 + 0.
2 0.
95 0.
5 I Features 0.
5 R 4 1 + 0.
1 3 0.
4 − 0.
05 2 0.
2 1.
1 − 0.
1 + 0.
2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR IFM Rating 30 150 110 30 20 125 −55 to +125 °C °C mA Unit V mA 0.
4 ± 0.
2 1 : Cathode 1 2 : Anode 2 3 : Cathode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1P Internal Connection 4 3 1 2 Junction temperature Storage temperature Note) * : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.
9 kΩ, CL = 10 pF 1.
5 1.
0 Conditions Min Typ Max 1 0.
4 1.
0 Unit µA V V pF ns Detection efficiency 65 0 to 0.
1 0.
1 to 0.
3 0.
8 0.
16 − 0.
06 + 0.
1 0.
6 − 0 + 0.
1 0.
4 − 0.
05 1.
45 + 0.
1 % Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2.
Rated input/output frequency: 2 000 MHz 3.
* : trr measuring instrument Bias Aplication Unit N-50BU Input Pulse tp 10% Output Pulse tr t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 1 MA4X714 I...


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