DatasheetsPDF.com

MAC212-8FP

Motorola
Part Number MAC212-8FP
Manufacturer Motorola
Description Triac
Published Apr 27, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC212FP/D Triacs MAC212FP Series MAC212AFP Series ISOL...
Datasheet PDF File MAC212-8FP PDF File

MAC212-8FP
MAC212-8FP

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC212FP/D Triacs MAC212FP Series MAC212AFP Series ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS Silicon Bidirectional Thyristors .
.
.
designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed.
Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
• Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or Four Modes (MAC212AFP Series) MT2 G MT1 CASE 221C-02 STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.
) Rating Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC212-4FP, MAC212A4FP MAC212-6FP, MAC212A6FP MAC212-8FP, MAC212A8FP MAC212-10FP, MAC212A10FP On-State RMS Current (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C) preceded and followed by rated current Circuit Fusing (t = 8.
3 ms) Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) Average Gate Power (TC = +85°C, t = 8.
3 ms) Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Storage Temperature Range Symbol VDRM 200 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) 12 100 40 20 0.
35 2 1500 –40 to +125 –40 to +150 Amps Amps A2s Watts Watt Amps Volts °C °C Value Unit Volts p 20%) IGM V(ISO) TJ Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Symbol...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)