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PHD3N20L

NXP
Part Number PHD3N20L
Manufacturer NXP
Description N-Channel MOSFET
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhance...
Datasheet PDF File PHD3N20L PDF File

PHD3N20L
PHD3N20L

Overview
Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance.
Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
PHD3N20L QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
200 3.
5 50 1.
5 UNIT V A W Ω PINNING - SOT428 PIN 1 2 3 tab gate drain source DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 2 drain 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER ID IDM PD ∆PD/∆Tmb VGS VGSM EAS IAS Tj, Tstg Continuous drain current Pulsed drai...


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