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PHD66NQ03LT

NXP
Part Number PHD66NQ03LT
Manufacturer NXP
Description N-channel TrenchMOS logic level FET
Published Mar 22, 2005
Detailed Description PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET Rev. 06 — 2 August 2004 Product data sheet 1. Product profile 1...
Datasheet PDF File PHD66NQ03LT PDF File

PHD66NQ03LT
PHD66NQ03LT

Overview
PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET Rev.
06 — 2 August 2004 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features s Logic level threshold s Low on-state resistance.
1.
3 Applications s DC-to-DC converters s General purpose switching.
1.
4 Quick reference data s VDS ≤ 25 V s RDSon ≤ 10.
5 mΩ s ID ≤ 66 A s Qgd = 3.
6 nC (typ).
2.
Pinning information Table 1: Discrete pinning Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline [1] mb mb 2 13 SOT404 (D2-PAK) 2 13 Top view SOT428 (D-PAK) [1] It is not possible to make a connection to pin 2 of the SOT404 and SOT428 packages.
Symbol d g mbb076 s Philips Semiconductors PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET 3.
Ordering information Table 2: Ordering information Type number Package Name Description Version PHB66NQ03LT D2-PAK Plastic single-ended surface mounted package (Philips version of D2-PAK); SOT404 3 leads (one lead cropped) PHD66NQ03LT D-PAK Plastic single-ended surface mounted package (Philips version of D-PAK); SOT428 3 leads (one lead cropped) 4.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) IDM peak drain current Ptot total power dissipation 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Tmb = 25 °C; VGS = 10 V Tmb = 100 °C; VGS = 10 V Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Tstg storage temperature Tj junction temperature Source-drain diode IS source (diode forward) current (DC) Tmb = 25 °C ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 ...


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