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PHKD3NQ10T

Part Number	PHKD3NQ10T
Manufacturer	NXP
Description	Dual N-channel TrenchMOS standard level FET
Published	Mar 22, 2005
Detailed Description	Philips Semiconductors Product specification Dual N-channel TrenchMOSTM transistor PHKD3NQ10T FEATURES • Dual device...
Datasheet	PHKD3NQ10T PDF File

Overview

... • Low on-state resistance • Fast switching • Low profile surface mount package SYMBOL d1 d2 QUICK REFERENCE DATA VDS = 100 V ID = 3 A RDS(ON) ≤ 90 mΩ (VGS = 10 V) s2 g1 s1 g2 GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.
Applications:• Motor and relay drivers • d.
c.
to d.
c.
converters The PHKD3NQ10T is supplied in the SOT96-1 (SO8) surface mounting package.
PINNING PIN 1 2 3 4 5,6 7,8 DESCRIPTION source 1 gate 1 source 2 gate 2 drain 2 drain 1 SOT96-1 8 7 6 5 pin 1 index 1 2 3 4 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot...

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PHKD3NQ10T Dual N-channel TrenchMOS standard level FET - NXP

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