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PHP10N10E

NXP
Part Number PHP10N10E
Manufacturer NXP
Description PowerMOS transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product Specification PowerMOS transistor PHP10N10E GENERAL DESCRIPTION N-channel enhancement...
Datasheet PDF File PHP10N10E PDF File

PHP10N10E
PHP10N10E

Overview
Philips Semiconductors Product Specification PowerMOS transistor PHP10N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
100 11 60 175 0.
25 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperatur...


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