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PHP10N60E

NXP
Part Number PHP10N60E
Manufacturer NXP
Description PowerMOS transistors Avalanche energy rated
Published Mar 22, 2005
Detailed Description Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Ava...
Datasheet PDF File PHP10N60E PDF File

PHP10N60E
PHP10N60E

Overview
Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP10N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 9.
6 A RDS(ON) ≤ 0.
75 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The PHP10N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING PIN 1 2 3 case gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 1 2 3 gate source drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Con...


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