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PHP66NQ03LT

NXP
Part Number PHP66NQ03LT
Manufacturer NXP
Description N-channel TrenchMOS transistor
Published Mar 22, 2005
Detailed Description PHP/PHB/PHD66NQ03LT N-channel TrenchMOS transistor Rev. 02 — 10 December 2001 Product data 1. Description N-channel log...
Datasheet PDF File PHP66NQ03LT PDF File

PHP66NQ03LT
PHP66NQ03LT

Overview
PHP/PHB/PHD66NQ03LT N-channel TrenchMOS transistor Rev.
02 — 10 December 2001 Product data 1.
Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.
Product availability: PHP66NQ03LT in SOT78 (TO-220AB) PHB66NQ03LT in SOT404 (D2-PAK) PHD66NQ03LT in SOT428 (D-PAK).
2.
Features s Low on-state resistance s Fast switching.
3.
Applications s High frequency computer motherboard DC to DC converters.
4.
Pinning information Table 1: 1 2 3 mb Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline [1] mb mb mb Pin Description gate (g) drain (d) source (s) mounting base, connected to drain (d) Symbol d g s MBB076 2 2 1 MBK106 1 3 MBK116 3 MBK091 Top view 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) SOT428 (D-PAK) It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.
V.
Philips Semiconductors PHP/PHB/PHD66NQ03LT N-channel TrenchMOS transistor 5.
Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C; VGS = 5 V total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Tmb = 25 °C Typ 9.
1 12.
3 Max 25 66 57 93 175 12 16 Unit V A A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) Symbol Parameter 6.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS VGSM ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) peak gate-source voltage drain current (DC) tp ≤ 50 µs; pulsed; duty cycle 25%; Tj ≤ 150 °C Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Tmb = 25 °C; VGS = 10 V Tmb = 100 °C; VGS = 10 V IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature ope...


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