DatasheetsPDF.com

PHP78NQ03LT

NXP
Part Number PHP78NQ03LT
Manufacturer NXP
Description N-channel enhancement mode field-effect transistor
Published Mar 22, 2005
Detailed Description PHP/PHB/PHD78NQ03LT N-channel enhancement mode field-effect transistor Rev. 01 — 14 November 2001 Product data 1. Produc...
Datasheet PDF File PHP78NQ03LT PDF File

PHP78NQ03LT
PHP78NQ03LT

Overview
PHP/PHB/PHD78NQ03LT N-channel enhancement mode field-effect transistor Rev.
01 — 14 November 2001 Product data 1.
Product profile 1.
1 Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology.
Product availability: PHP78NQ03LT in SOT78 (TO-220AB) PHB78NQ03LT in SOT404 (D2-PAK) PHD78NQ03LT in SOT428 (D-PAK).
1.
2 Features s Low on-state resistance s Fast switching 1.
3 Applications s Computer motherboards s DC to DC converters 1.
4 Quick reference data s VDS = 25 V s Ptot = 93 W (Tmb = 25 °C) s ID = 75 A (Tmb = 25 °C) s RDSon = 9 mΩ (Tj = 25 °C) 2.
Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT428 simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d) 1 MBK106 Simplified outline mb mb mb Symbol [1] d g 2 3 1 MBK116 2 3 MBK091 MBB076 s Top view 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) SOT428 (D-PAK) It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
Philips Semiconductors PHP/PHB/PHD78NQ03LT N-channel enhancement mode field-effect transistor 3.
Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS VGSM ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) gate-source voltage drain current (DC) tp ≤ 50 µs; pulsed; duty cycle 25 %; Tj ≤ 150 °C Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Tmb = 25 °C; VGS = 10 V Tmb = 100 °C; VGS = 10 V IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions Tj = 25 to 175 °C Tj = 25 to 175 °C; RGS = 20 kΩ Min −55 −55 Max 25 25 ±15 ±20 61 43 75 53 228 93 +175 +175 75 228 Unit V V...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)