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PHU2N50E

NXP
Part Number PHU2N50E
Manufacturer NXP
Description PowerMOS transistors Avalanche energy rated
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanc...
Datasheet PDF File PHU2N50E PDF File

PHU2N50E
PHU2N50E

Overview
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Extremely high dV/dt capability PHU2N50E QUICK REFERENCE DATA VDSS = 500 V ID = 2 A RDS(ON) ≤ 5 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in Compact Fluorescent Lamps (CFL) and low power ballasts.
The PHU2N50E is compatible with self oscillating and IC driven circuits, including the UBA2021 ballast controller IC.
Other applications include off line switched mode power supplies and D.
C.
to D.
C.
c...


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