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PHW45NQ10T

NXP
Part Number PHW45NQ10T
Manufacturer NXP
Description N-channel TrenchMOS transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T QUICK ...
Datasheet PDF File PHW45NQ10T PDF File

PHW45NQ10T
PHW45NQ10T

Overview
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 47 A g RDS(ON) ≤ 25 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:• d.
c.
to d.
c.
converters • switched mode power supplies The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB45NQ10T is supplied in the SOT404 (D2PAK) surface mounting package.
The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package.
PINNING PIN 1 2 3 tab DESCRIPTION SOT78 (TO220AB) tab SOT404 (D2PAK) tab SOT429 (TO247) gate drain1 source 2 drain 1 23 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj,...


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