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PHW8ND50E

Part Number	PHW8ND50E
Manufacturer	NXP
Description	PowerMOS transistors FREDFET/ Avalanche energy rated
Published	Mar 22, 2005
Detailed Description	Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche e...
Datasheet	PHW8ND50E PDF File

Overview

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.
5 A g RDS(ON) ≤ 0.
85 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).
This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and ...

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PHW8ND50E PowerMOS transistors FREDFET/ Avalanche energy rated - NXP

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