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PHX1N40

NXP
Part Number PHX1N40
Manufacturer NXP
Description PowerMOS transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistor PHX1N40 GENERAL DESCRIPTION N-channel enhancement m...
Datasheet PDF File PHX1N40 PDF File

PHX1N40
PHX1N40

Overview
Philips Semiconductors Product specification PowerMOS transistor PHX1N40 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance.
Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
400 1.
7 25 3.
5 UNIT V A W Ω PINNING - SOT186A PIN 1 2 3 gate drain source DESCRIPTION PIN CONFIGURATION case SYMBOL d g case isolated 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER ID IDM PD ∆PD/∆Tmb VGS EAS IAS Tj, Tstg Continuous drain current Pulsed drain current Total dissipation Linear dera...


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