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PHX3055E

Part Number	PHX3055E
Manufacturer	NXP
Description	N-channel TrenchMOS transistor
Published	Mar 22, 2005
Detailed Description	Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHX3055E FEATURES • ’Trench’ technology...
Datasheet	PHX3055E PDF File

Overview

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHX3055E FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Isolated mounting tab SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 9 A g RDS(ON) ≤ 150 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope with an electrically isolated mounting tab.
The device uses ’trench’ technology to achieve low on-state resistance.
Applications:• d.
c.
to d.
c.
converters • switched mode power supplies The PHX3055E is supplied in the SOT186A (isolated TO220AB) conventional leaded package.
PINNING PIN 1 2 3 tab gate drain source isolated...

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