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MGP15N60U

Motorola
Part Number MGP15N60U
Manufacturer Motorola
Description Insulated Gate Bipolar Transistor
Published Apr 27, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP15N60U/D Product Preview Insulated Gate Bipolar Tran...
Datasheet PDF File MGP15N60U PDF File

MGP15N60U
MGP15N60U

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP15N60U/D Product Preview Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
It also provides fast switching characteristics and results in efficient operation at high frequencies.
• • • • • Industry Standard TO–220 Package High Speed Eoff: 67 mJ/A typical at 125°C Low On–Voltage – 1.
7 V typical at 8.
0 A, 125°C Robust High Voltage Termination ESD Protection Gate–Emitter Zener Diodes MGP15N60U IGBT IN TO–220 15 A @ 90°C 26 A @ 25°C 600 VOLTS VERY LOW ON–...


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