DatasheetsPDF.com

MGSF1N02LT1

ON
Part Number MGSF1N02LT1
Manufacturer ON
Description Power MOSFET 750 mAmps / 20 Volts
Published Apr 27, 2005
Detailed Description MGSF1N02LT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N–Channel SOT–23 These miniature surface mount MOSFETs lo...
Datasheet PDF File MGSF1N02LT1 PDF File

MGSF1N02LT1
MGSF1N02LT1

Overview
MGSF1N02LT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N–Channel SOT–23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.
Typical applications are dc–dc converters and power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT–23 Surface Mount Package Saves Board Space MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance – Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RθJA TL Value 20 ± 20 750 2000 400 – 55 to 150 300 260 Unit Vdc Vdc 1 mA mW °C °C/W °C 1 2 3 http://onsemi.
com 750 mAMPS 20 VOLTS RDS(on) = 90 mW N–Channel 3 2 MARKING DIAGRAM SOT–23 CASE 318 STYLE 21 N2 W W = Work Week PIN ASSIGNMENT Drain 3 1 2 Gate Source ORDERING INFORMATION Device MGSF1N02LT1 MGSF1N02LT3 Package SOT–23 SOT–23 Shipping 3000 Tape & Reel 10,000 Tape & Reel Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000 1 November, 2000 – Rev.
3 Publication Order Number: MGSF1N02LT1/D MGSF1N02LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.
) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Static Drai...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)