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MGW21N60ED

ON
Part Number MGW21N60ED
Manufacturer ON
Description Insulated Gate Bipolar Transistor
Published Apr 27, 2005
Detailed Description MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Insulated Gate Bipolar Transisto...
Datasheet PDF File MGW21N60ED PDF File

MGW21N60ED
MGW21N60ED

Overview
...r N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Its new 600V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on).
It also provides fast switching characteristics and results in efficient operation at high frequencies.
Co–packaged IGBTs save space, reduce assembly time and cost.
This new E–series introduces an energy efficient, ESD protected, and rugged short circuit device.
• Industry Standard TO–247 Package ...


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