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MDS80-1200

ST Microelectronics
Part Number MDS80-1200
Manufacturer ST Microelectronics
Description DIODE / SCR MODULE
Published Apr 29, 2005
Detailed Description MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 an...
Datasheet PDF File MDS80-1200 PDF File

MDS80-1200
MDS80-1200

Overview
MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration.
They are suitable for high power applications, using phase controlled bridges, such as soft-start circuits, welding equipment, motor speed controller.
The compactness of the ISOTOP package allows high power density and optimized power bus connections.
Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (File ref: E81734).
PIN CONNECTIONS ISOTOP® ABSOLUTE RATINGS (limiting values) Value Symbol IT(RMS) IT(AV) ITSM IFSM I²t dI/dt IGM PG(AV) Tstg Tj VRGM RMS on-state current Average on-state current (Single phase-circuit, 180° conduction angle per device) tp = 8.
3 ms Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 10 ms I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse SCR gate voltage tp = 10 ms F = 60 Hz tp = 20 µs Tc = 85°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C Parameter 35 50 25 420 400 50 70 35 630 600 80 85 55 730 700 A2S A/µs A W °C V 1/7 A A A Unit 800 1800 2450 50 4 1 - 40 to + 150 - 40 to + 125 5 ISOTOP is a registred trademark of STMicroelectronics December 2000 - Ed: 4 MDS35 / 50 / 80 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SCR MDS Symbol I GT VD = 12 V VGT VGD IH IL dV/dt VD = VDRM IT = 500 mA IG = 1.
2 I GT VD = 67% VDRM ITM = 80 A VTM ITM = 110 A ITM = 170 A Vt0 Rd IDRM IRRM Gate open Tj = 125°C RL = 3.
3 kΩ Gate open Tj = 125°C RL = 30 Ω Test Conditions 35 MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
1.
7 Tj = 25°C MAX.
Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX.
MAX.
MAX.
11 5 50 1.
3 0.
2 80 120 1000 1.
75 ...


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