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MG200Q1US51

Toshiba
Part Number MG200Q1US51
Manufacturer Toshiba
Description Silicon N Channel IGBT GTR Module
Published Apr 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 MG200Q1US51 High Power Switching Applications Motor Control Appl...
Datasheet PDF File MG200Q1US51 PDF File

MG200Q1US51
MG200Q1US51

Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.
3µs (Max.
) @Inductive load l Low saturation voltage : VCE (sat) = 3.
6V (Max.
) l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 465g Characteristic Symbol Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward Current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range VCES VGES IC (25°C / 80°C) ICP (25°C / 80°C) IF IFM PC Tj Tstg Isolation voltage VIsol Screw torque (Terminal : M4/M6/mounting) ― Rating 1200 ±20 300 / 200 600 / 400 200 400 1500 150 −40 ~ 125 2500 (AC 1 min.
) 2/3/3 Unit V V A A W °C °C V N·m ― ― 2-109F1A 000707EAA2 · TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, sem...


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