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MG200Q1ZS11

Toshiba
Part Number MG200Q1ZS11
Manufacturer Toshiba
Description Silicon N Channel IGBT GTR Module
Published Apr 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 MG200Q1ZS11 High Power Switching Applications Motor Control Appl...
Datasheet PDF File MG200Q1ZS11 PDF File

MG200Q1ZS11
MG200Q1ZS11

Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 1.
0µs (Max.
) trr = 0.
5µs (Max.
) Low saturation voltage : VCE (sat) = 2.
7V (Max.
) Enhancement-mode The electrodes are isolated from case Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 445g Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg...


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