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MG25J1BS11

Toshiba
Part Number MG25J1BS11
Manufacturer Toshiba
Description Silicon N - Channel IGBT
Published Apr 29, 2005
Detailed Description TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications MG...
Datasheet PDF File MG25J1BS11 PDF File

MG25J1BS11
MG25J1BS11

Overview
TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications MG25J1BS11 Unit: mm Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP PC Tj Tstg VIsol ― JEDEC JEITA TOSHIBA Rating 600 ±20 25 50 125 150 −40 to 125 2500 (AC 1 Minute) 2/3 Unit V V A W °C °C V N·m ― ― 2-33F2A 1 2003-04-11 Electrical Characteristics (Ta = 25°C) Character...


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