DatasheetsPDF.com

MG25Q2YS40

Toshiba
Part Number MG25Q2YS40
Manufacturer Toshiba
Description Silicon N Channel IGBT GTR Module
Published Apr 29, 2005
Detailed Description TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor C...
Datasheet PDF File MG25Q2YS40 PDF File

MG25Q2YS40
MG25Q2YS40

Overview
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • Low saturation voltage: • Enhancement mode tf = 0.
5µs (Max.
) trr = 0.
5µs (Max.
) VCE (sat)= 4.
0V (Max.
) • The electrodes are isolated from case • Includes a complete half bridge card in one package Maximum Ratings (Ta = 25°C) CHARACTERISTICS SYMBOL RATING UNIT Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque (Terminal/Mounting)...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)