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MG25Q6ES42

Part Number	MG25Q6ES42
Manufacturer	Toshiba
Description	Silicon N Channel IGBT GTR Module
Published	Apr 29, 2005
Detailed Description	TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor C...
Datasheet	MG25Q6ES42 PDF File

Overview

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: • Low saturation voltage: • Enhancement mode tf = 0.
5µs (Max.
) trr = 0.
5µs (Max.
) VCE (sat) = 4.
0V (Max.
) • The electrodes are isolated from case Maximum Ratings (Ta = 25°C) CHARACTERISTICS Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque SYMBOL RATING VCES VGES IC ICP IF IFM 1200 ± 20 25 50 25 50 PC 200 Tj Tstg ...

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