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MG90V2YS40

Toshiba
Part Number MG90V2YS40
Manufacturer Toshiba
Description Silicon N Channel IGBT GTR Module
Published Apr 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MG90V2YS40 High Power Switching Applications Motor Control Applications MG90V...
Datasheet PDF File MG90V2YS40 PDF File

MG90V2YS40
MG90V2YS40

Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG90V2YS40 High Power Switching Applications Motor Control Applications MG90V2YS40 Unit: mm l The electrodes are isolated from case.
l High input impedance l Includes a complete half bridge in one package.
l Enhancement-mode l High speed : tf = 1.
5µs (max) (IC = 90A) trr = 0.
3µs (max) (IF = 90A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol...


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