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MGA-64135

Agilent(Hewlett-Packard)
Part Number MGA-64135
Manufacturer Agilent(Hewlett-Packard)
Description 2 - 6 GHz Cascadable GaAs MMIC Amplifier
Published Apr 29, 2005
Detailed Description 2 – 6 GHz Cascadable GaAs MMIC␣ Amplifier Technical Data MGA-64135 Features • Cascadable 50 Ω Gain Block • Broadband Pe...
Datasheet PDF File MGA-64135 PDF File

MGA-64135
MGA-64135


Overview
2 – 6 GHz Cascadable GaAs MMIC␣ Amplifier Technical Data MGA-64135 Features • Cascadable 50 Ω Gain Block • Broadband Performance: 2–6␣ GHz 12.
0 dB Typical Gain ± 0.
8 dB Gain Flatness 12.
0 dBm P1 dB • Single Supply Bias • Cost Effective Ceramic Microstrip Package applications include narrow and broadband IF and RF amplifiers for commercial, industrial, and military requirements.
This MMIC is a cascade of two stages, each utilizing shunt feedback to establish a broadband impedance match.
The source of each stage is AC grounded to allow biasing from a single positive power supply.
The interstage blocking capacitor as well as a resistive “self-bias” network are included on chip.
The die is fabricated using HP’s nominal .
5 micron recessed Schottky-barrier-gate, gold metallization and silicon nitride passivation to achieve excellent performance, uniformity, and reliability.
35 Micro-X Package Description The MGA-64135 is a high performance gallium arsenide Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package.
This device is designed for use as a general purpose 50 ohm gain block in the 2 to 6␣ GHz frequency range.
Typical Typical Biasing Configuration Vd RFC 4 3 IN 1 MGA C block OUT 2 5965-9005E 6-192 MGA-64135 Absolute Maximum Ratings Symbol Vd Pdiss Pin Tch TSTG Parameter Device Voltage Total Power Dissipation[2] CW RF Input Power Channel Temperature Storage Temperature[3] Units V mW dBm °C °C Absolute Maximum[1] 12 650 +13 175 -65 to 175 Thermal Resistance: Liquid Crystal Measurement: θjc = 150°C/W [4]; TCH = 150°C 1 µm Spot Size [5] Notes: 1.
Operation of this device above any one of these parameters may cause permanent damage.
2.
Derate linearly at 8.
3 mW/°C for TCASE > 103°C.
3.
Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
After a device has been soldered into a circuit, it may be safely stored up to 175°C.
4.
The thermal resistance value is based on me...



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