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MGA83563TR1

Agilent(Hewlett-Packard)
Part Number MGA83563TR1
Manufacturer Agilent(Hewlett-Packard)
Description +22 dBm PSAT 3V Power Amplifier for 0.5 6 GHz Applications
Published Apr 29, 2005
Detailed Description +22 dBm PSAT 3V Power Amplifier for 0.5 – 6 GHz Applications Technical Data MGA-83563 Features • +22 dBm PSAT at 2.4 GH...
Datasheet PDF File MGA83563TR1 PDF File

MGA83563TR1
MGA83563TR1


Overview
+22 dBm PSAT 3V Power Amplifier for 0.
5 – 6 GHz Applications Technical Data MGA-83563 Features • +22 dBm PSAT at 2.
4 GHz, 3.
0 V +23 dBm PSAT at 2.
4 GHz, 3.
6 V • 22 dB Small Signal Gain at 2.
4 GHz • Wide Frequency Range 0.
5 to 6 GHz • Single 3 V Supply • 37% Power Added Efficiency • Ultra Miniature Package Surface Mount Package SOT-363 (SC-70) Description Agilent’s MGA-83563 is an easyto-use GaAs RFIC amplifier that offers excellent power output and efficiency.
This part is targeted for 3V applications where constant-envelope modulation is used.
The output of the amplifier is matched internally to 50 Ω.
However, an external match can be added for maximum efficiency and power out (PAE = 37%, Po = 22 dBm).
The input is easily matched to 50 Ω.
Due to the high power output of this device, it is recommended for use under a specific set of operating conditions.
The thermal sections of the Applications Information explain this in detail.
The circuit uses state-of-the-art PHEMT technology with proven reliability.
On-chip bias circuitry allows operation from single supply voltage.
Pin Connections and Package Marking Vd1 GND 1 2 3 6 5 4 OUTPUT and Vd2 GND GND 83x Applications • Amplifier for Driver and Output Applications INPUT Note: Package marking provides orientation and identification; “x” is date code.
Equivalent Circuit (Simplified) OUTPUT and Vd2 Vd1 INPUT BIAS BIAS GROUND 2 MGA-83563 Absolute Maximum Ratings Symbol V Pin Tch TSTG Parameter Maximum DC Supply Voltage CW RF Input Power Channel Temperature Storage Temperature Units V dBm °C °C Absolute Maximum[1] 4 +13 165 -65 to 150 Thermal Resistance[2]: θ ch to c = 175°C/W Notes: 1.
Operation of this device above any one of these limits may cause permanent damage.
2.
TC = 25° C (TC is defined to be the temperature at the package pins where contact is made to the circuit board).
POWER DISSIPATED AS HEAT (mW) Pd = (VOLTAGE) x (CURRENT) – (Pout) 800 700 600 500 400 300 200 100 0 10 30 50 70 90 110 130 150 ...



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