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MGF1801BT

Mitsubishi
Part Number MGF1801BT
Manufacturer Mitsubishi
Description High-power GaAs FET
Published Apr 29, 2005
Detailed Description < High-power GaAs FET (small signal gain stage) > MGF1801BT S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801BT, ...
Datasheet PDF File MGF1801BT PDF File

MGF1801BT
MGF1801BT

Overview
< High-power GaAs FET (small signal gain stage) > MGF1801BT S to X BAND / 0.
2W non - matched DESCRIPTION The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.
The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.
The MGF1801BT is mounted in the super 24 tape.
FEATURES  High linear power gain Glp=9.
0dB @f=8GHz  High P1dB P1dB=23dBm(TYP.
) @f=8GHz  High reliability and stability APPLICATION  S to X Band medium-power amplifiers and oscillators QUALITY  IG RECOMMENDED BIAS CONDITION  VDS=6V,Id=100mA Absolute maximum ratings (T...


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