DatasheetsPDF.com

MGF2407A

Mitsubishi
Part Number MGF2407A
Manufacturer Mitsubishi
Description High-power GaAs FET
Published Apr 29, 2005
Detailed Description < High-power GaAs FET (small signal gain stage) > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, ...
Datasheet PDF File MGF2407A PDF File

MGF2407A
MGF2407A

Overview
< High-power GaAs FET (small signal gain stage) > MGF2407A S to Ku BAND / 0.
28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers.
FEATURES  High output power Po=24.
5dBm(TYP.
) @f=14.
5GHz  High linear power gain GLP=8.
0dB(TYP.
) @f=14.
5GHz  High power added efficiency P.
A.
E.
=30%(TYP.
) @f=14.
5GHz,P1dB APPLICATION  S to Ku Band power amplifiers QUALITY  IG RECOMMENDED BIAS CONDITIONS  Vds=10V  Ids=75mA Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter VGDO VGSO ID IGR IGF PT*1 Tch Tstg Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature *1:Tc=25C Ratings -15 -15 200 -0.
6 2.
5 1.
5 175 -65 to +175 Unit V V mA mA mA W C C Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making se...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)