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MGF2430A

Mitsubishi
Part Number MGF2430A
Manufacturer Mitsubishi
Description High-power GaAs FET
Published Apr 29, 2005
Detailed Description < High-power GaAs FET (small signal gain stage) > MGF2430A L to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, ...
Datasheet PDF File MGF2430A PDF File

MGF2430A
MGF2430A

Overview
< High-power GaAs FET (small signal gain stage) > MGF2430A L to Ku BAND / 1.
1W non - matched DESCRIPTION The MGF2430A, GaAs FET with an N-channel schottky gate, is designed for L to Ku band amplifiers.
FEATURES • High output power P1dB=30.
5dBm(T.
Y.
P) @f=14.
5GHz • High linear gain GLP=6.
5dB(TYP.
) @f=14.
5GHz • High power added efficiency P.
A.
E=27%(TYP.
) @f=14.
5GHz,P1dB • Hermetically sealed metal package APPLICATION • For L to Ku band power amplifiers QUALITY • IG OUTLINE DRAWING RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=300mA • Rg=500Ω Absolute maximum ratings Symbol Parameter VGDO Gate to Source Voltage VGSO Gate to source voltage IDSS Saturated drain current IGR Reverse gate cur...


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