MITSUBISHI SEMICONDUCTOR
MGF431xG
Super Low Noise InGaAs HEMT
DESCRIPTION
The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
OUTLINE DRAWING
FEATURES
Low noise figure @ f=12GHz MGF4316G : NF min. =0. 80dB (MAX. ) MGF4319G : NF min. =0. 50dB (MAX. ) High associated gain Gs=12. 0 dB (MIN. ) @ f=12GHz
APPLICATION
L to K band low noise amplifiers.
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA Refer to Bias Procedure
GD-4
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
( Ta=25°C ) Ratings -4 -4 60 50 125 -65 ~ +125 Unit
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MGF4319G PDF File
