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MGFC42V5964

Mitsubishi
Part Number MGFC42V5964
Manufacturer Mitsubishi
Description C band internally matched power GaAs FET
Published Apr 29, 2005
Detailed Description < C band internally matched power GaAs FET > MGFC42V5964 5.9 – 6.4 GHz BAND / 16W DESCRIPTION The MGFC42V5964 is an inte...
Datasheet PDF File MGFC42V5964 PDF File

MGFC42V5964
MGFC42V5964

Overview
< C band internally matched power GaAs FET > MGFC42V5964 5.
9 – 6.
4 GHz BAND / 16W DESCRIPTION The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.
9 – 6.
4 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=16W (TYP.
) @f=5.
9 – 6.
4GHz  High power gain GLP=9dB (TYP.
) @f=5.
9 – 6.
4GHz  High power added efficiency P.
A.
E.
=31% (TYP.
) @f=5.
9 – 6.
4GHz  Low distortion [item -51] IM3=-45dBc (TYP.
) @Po=32dBm S.
C.
L APPLICATION  item 01 : 5.
9 – 6.
4 GHz band power amplifier  item 51 : 5.
9 – 6.
4 GHz band digital radio communic...


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