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MGFK25V4045

Mitsubishi
Part Number MGFK25V4045
Manufacturer Mitsubishi
Description power GaAs FET
Published Apr 29, 2005
Detailed Description < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is a...
Datasheet PDF File MGFK25V4045 PDF File

MGFK25V4045
MGFK25V4045

Overview
< X/Ku band internally matched power GaAs FET > MGFK25V4045 14.
0 – 14.
5 GHz BAND / 0.
3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.
0 – 14.
5 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Internally matched to 50(ohm) system Flip-chip mounted  High output power P1dB=0.
3W (TYP.
) @f=14.
0 – 14.
5GHz  High linear power gain GLP=9.
0dB (TYP.
) @f=14.
0 – 14.
5GHz  High power added efficiency P.
A.
E.
=25% (TYP.
) @f=14.
0 – 14.
5GHz APPLICATION  14.
0 – 14.
5 GHz band power amplifiers QUALITY GRADE  IG RECOMMENDED BIAS CONDITIONS  VDS=8V  ID=80mA Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown voltage -15 ID Drain current 500 IGR Reverse gate current -1 IGF Forward gate current 1 PT *1 Total power dissipation 2.
7 Tch Canne...


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