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MGFK30V4045

Mitsubishi
Part Number MGFK30V4045
Manufacturer Mitsubishi
Description power GaAs FET
Published Apr 29, 2005
Detailed Description < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is a...
Datasheet PDF File MGFK30V4045 PDF File

MGFK30V4045
MGFK30V4045

Overview
< X/Ku band internally matched power GaAs FET > MGFK30V4045 14.
0 – 14.
5 GHz BAND / 1.
1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.
0 – 14.
5 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Internally matched to 50(ohm) system Flip-chip mounted  High output power P1dB=1.
1W (TYP.
) @f=14.
0 – 14.
5GHz  High linear power gain GLP=8.
0dB (TYP.
) @f=14.
0 – 14.
5GHz  High power added efficiency P.
A.
E.
=24% (TYP.
) @f=14.
0 – 14.
5GHz APPLICATION  14.
0 – 14.
5 GHz band power amplifiers QUALITY GRADE  IG RECOMMENDED BIAS CONDITIONS  VDS=8V  ID=350mA Refer to Bias Procedure Absol...


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