DatasheetsPDF.com

MCR68-2

ON
Part Number MCR68-2
Manufacturer ON
Description SILICON CONTROLLED RECTIFIERS
Published Apr 30, 2005
Detailed Description MCR68-2 Silicon Controlled Rectifiers Reverse Blocking Thyristors • Glass-Passivated Junctions for Greater Parameter Sta...
Datasheet PDF File MCR68-2 PDF File

MCR68-2
MCR68-2

Overview
MCR68-2 Silicon Controlled Rectifiers Reverse Blocking Thyristors • Glass-Passivated Junctions for Greater Parameter Stability and • • • • Reliability Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability High Capacitor Discharge Current, 300 Amps Device Marking: Logo, Device Type, e.
g.
, MCR68–2, Date Code http://onsemi.
com Designed for overvoltage protection in crowbar circuits.
SCRs 12 AMPERES RMS 50 VOLTS G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = 40 to +125°C, Gate Open) MCR68–2 Symbol VDRM, VRRM 50 ITM IT(RMS) IT(AV) ITSM 300 12 8.
0 100 Amps Amps Amps Value Unit Volts A K * 4 Peak Discharge Current(2) On-State RMS Current (180° Conduction Angles; TC = 85°C) Average On-State Current (180° Conduction Angles; TC = 85°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing Considerations (t = 8.
3 ms) Forward Peak Gate Current (t ≤ 1.
0 µs, TC = 85°C) Forward Peak Gate Power (t ≤ 1.
0 µs, TC = 85°C) Forward Average Gate Power (t = 8.
3 ms, TC = 85°C) Operating Junction Temperature Range Storage Temperature Range Mounting Torque 1 Amps 2 3 I2t IGM PGM PG(AV) TJ Tstg — 40 2.
0 20 0.
5 – 40 to +125 – 40 to +150 8.
0 A2s Amps 1 Watts Watt °C 2 3 4 TO–220AB CASE 221A STYLE 3 PIN ASSIGNMENT Cathode Anode Gate Anode ORDERING INFORMATION °C in.
lb.
Device MCR68–2 Package TO220AB Shipping 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis.
Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
(2) Ratings apply for tw = 1 ms.
See Figure 1 for ITM capability for various duration o...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)