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M29W640DB

ST Microelectronics
Part Number M29W640DB
Manufacturer ST Microelectronics
Description 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory
Published May 2, 2005
Detailed Description M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s ...
Datasheet PDF File M29W640DB PDF File

M29W640DB
M29W640DB

Overview
M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.
7V to 3.
6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1.
Packages ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs per Byte/Word typical – Double Word Programming Option s 135 MEMORY BLOCKS – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location) – 127 Main Blocks, 64 KBytes each TSOP48 (N) 12 x 20mm s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend FBGA s TFBGA63 (ZA) 63 ball array s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming VPP/WP Pin for FAST PROGRAM and WRITE PROTECT TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE – 64-bit Security Code EXTENDED MEMORY BLOCK – Extra block used as security block or to store additional information s s s s s LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W640DT: 22DEh – Bottom Device Code M29W640DB: 22DFh s s April 2003 This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
1/50 M29W640DT, M29W640DB TABLE OF CONTENTS SUMMARY DESCRIPTION .
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5 Figure 2.
Logic Diagram .
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5 Table 1.
Signal Names .
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5 Figure 3.
TSOP Connections.
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6 Figure 4.
TFBGA C...


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