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M306N0FGTFP

Part Number	M306N0FGTFP
Manufacturer	Tyco Electronics
Description	60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON
Published	May 2, 2005
Detailed Description	SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6439/D The RF Line NPN Silicon RF Power Transistor . . . design...
Datasheet	M306N0FGTFP PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6439/D The RF Line NPN Silicon RF Power Transistor .
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designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.
• Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.
8 dB @ 400 MHz • Built–In Matching Network for Broadband Operation Using Double Match Technique • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications 2N6439 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1 MAXIM...

Similar Datasheet

M306N0FGTFP 60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON - Tyco Electronics

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