DatasheetsPDF.com

M32000D4AFP

Part Number	M32000D4AFP
Manufacturer	Tyco Electronics
Description	CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON
Published	May 2, 2005
Detailed Description	SEMICONDUCTOR TECHNICAL DATA Order this document by MRF327/D The RF Line NPN Silicon RF Power Transistor . . . design...
Datasheet	M32000D4AFP PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF327/D The RF Line NPN Silicon RF Power Transistor .
.
.
designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.
• Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.
3 dB @ 400 MHz • Built–In Matching Network for Broadband Operation Using Double Match Technique • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications • Characterized for 100 to 500 MHz MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.
0 9.
0 12 250 1.
43 –65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF327 80 W, 100 to 500 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.
7 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 8.
0 mAdc, IC = 0) Collector–Base Breakdown Voltage (IC = 80 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO V(BR)CBO ICBO 33 60 4.
0 60 — — — — — — — — — — 5.
0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 4.
0 Adc, VCE = 5.
0 Vdc) hFE 20 — 80 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.
0 MHz) Cob — 95 125 pF NOTE: (continued) 1.
This device is designed for RF operation.
The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 1 1...

Similar Datasheet

M32000D4AFP CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON - Tyco Electronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)