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M36W432TG

ST Microelectronics
Part Number M36W432TG
Manufacturer ST Microelectronics
Description 32 Mbit 2Mb x16 / Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product
Published May 2, 2005
Detailed Description M36W432TG M36W432BG 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product PREL...
Datasheet PDF File M36W432TG PDF File

M36W432TG
M36W432TG

Overview
M36W432TG M36W432BG 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY s MULTIPLE MEMORY PRODUCT – 32 Mbit (2Mb x 16), Boot Block, Flash Memory – 4 Mbit (256Kb x 16) SRAM Memory s SUPPLY VOLTAGE – VDDF = 2.
7V to 3.
3V – VDDS = VDDQF = 2.
7V to 3.
3V – VPPF = 12V for Fast Program (optional) s s s SRAM s 4 Mbit (256Kb x 16) s s s ACCESS TIME: 70ns LOW VDDS DATA RETENTION: 1.
5V POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS ACCESS TIME: 70ns, 85ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M36W432TG: 88BAh – Bottom Device Code, M36W432BG: 88BBh Figure 1.
Package FBGA FLASH MEMORY s MEMORY BLOCKS – Parameter Blocks (Top or Bottom Location) – Main Blocks s Stacked LFBGA66 (ZA) 12 x 8 mm PROGRAMMING TIME – 10µs typical – Double Word Programming Option – Quadruple Word Programming Option s BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WPF for Block Lock-Down s s s AUTOMATIC STANDBY MODE PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per BLOCK COMMON FLASH INTERFACE SECURITY – 128 bit user programmable OTP cells – 64 bit unique device identifier s s November 2002 This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
1/66 M36W432TG, M36W432BG TABLE OF CONTENTS SUMMARY DESCRIPTION .
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6 Figure 2.
Logic Diagram .
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6 Table 1.
Signal Names .
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6 Figure 3.
LFBGA Connections (Top view through package) .
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7 SIGNAL DES...


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