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M6MGT166S2BWG

Part Number	M6MGT166S2BWG
Manufacturer	Mitsubishi
Description	CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
Published	May 6, 2005
Detailed Description	MITSUBISHI LSIs M6MGB/T166S2BWG 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT...
Datasheet	M6MGT166S2BWG PDF File

Overview

MITSUBISHI LSIs M6MGB/T166S2BWG 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.
3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 2M-bits Static RAM in a 72-pin S-CSP.
16M-bits Flash memory is a 1,048,576 words, 3.
3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.
2M-bits SRAM is a 131,072words unsynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T166S2BWG is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .
FEATURES • Access time Flash Memory 90ns (Max.
) SRAM 85ns (Max.
) • Supply voltage Vcc=2.
7 ~ 3.
6V • Ambient temperature I version Ta=-40 ~ 85°C • Package : 72-pin S-CSP , 0.
8mm ball pitch APPLICATION Mobile communication products PIN CONFIGURATION (TOP VIEW) INDEX (Laser Marking) 1 A NC B NC C DU D A5 E A4 F-A18 S-LB# F-WP# GND F-WE# FRY/BY# 2 3 4 5 6 7 8 NC NC A16 A8 A10 A9 DQ15 NC A11 A15 A14 A13 A12 F-GND F-A17 S-UB# NC F-A19 F-RP# A7 A6 A3 S-OE# DU DU DQ12 SCE2 S-VCC DU NC DQ13 F-VCC S-VCC F-GND GND A0-A16 11.
0 mm F A0 G F-CE# DU DQ11 DQ9 DU DQ8 DQ10 :Vcc for Flash :Vcc for SRAM :GND for Flash :Flash/SRAM common GND :Flash/SRAM common Address F-A17-F-A19 :Address for Flash :Flash/SRAM DQ0-DQ15 common Data I/O F-CE# S-CE1# S-CE2 F-OE# S-OE# F-WE# S-WE# F-WP# F-RP# F-RY/BY# S-LB# S-UB# :Flash Chip Enable :SRAM Chip Enable 1 :SRAM Chip Enable 2 :Flash Output Enable :SRAM Output Enable :Flash Write Enable :SRAM Write Enable :Flash Write Protect :Flash Reset Power Down :Flash Ready /Busy :SRAM Lower Byte :SRAM Upper Byte H F-GND A2 I F-OE# DQ6 DQ4 S-WE# A1 SCE1# DQ0 DQ2 DQ1 DQ3 DQ14 J DU K NC L NC F-VCC DQ5 DQ7 DU NC NC 8.
0 mm NC:Non Connection DU:Don't ...

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M6MGT166S2BWG CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP - Mitsubishi

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