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MJE702

Part Number	MJE702
Manufacturer	Fairchild
Description	PNP Epitaxial Silicon Darlington Transistor
Published	May 7, 2005
Detailed Description	MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gai...
Datasheet	MJE702 PDF File

Overview

MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.
) @ IC= -1.
5 and -2.
0A DC • Complement to MJE800/801/802/803 1 TO-126 2.
Collector 3.
Base 1.
Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage : MJE700/701 : MJE702/703 Value - 60 - 80 - 60 - 80 -5 -4 - 0.
1 40 150 - 55 ~ 150 Unit s V V V V V A A W °C °C R1 R2 E Equivalent Circuit C B Collector-Emitter Voltage : MJE700/701 : MJE702/703 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature R 1 ≅ 10 k Ω R 2 ≅ 0.
6 k Ω Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : MJE700/701 : MJE702/703 Collector Cut-off Current : MJE700/701 : MJE702/703 Collector Cut-off Current Test Conditio...

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