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MJE801

Fairchild
Part Number MJE801
Manufacturer Fairchild
Description NPN Transistor
Published May 7, 2005
Detailed Description MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gai...
Datasheet PDF File MJE801 PDF File

MJE801
MJE801

Overview
MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.
) @ IC= 1.
5 and 2.
0A DC • Complement to MJE700/701/702/703 1 TO-126 2.
Collector 3.
Base 1.
Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : MJE800/801 : MJE802/803 : MJE800/801 : MJE802/803 Value 60 80 60 80 5 4 0.
1 40 150 - 55 ~ 150 Units V V V V V A A W °C °C R1 R2 E B Equivalent Circuit C R 1 ≅ 10 k Ω R 2 ≅ 0.
6 k Ω Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : MJE800/801 : MJE802/803 Collector Cut-off Current : MJE800/801 : MJE802/803 Collector Cut-off Current Test Condition IC = 50mA, IB = 0 Min.
60 80 VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C VBE = 5V, IC = 0 VCE = 3V, IC = 1.
5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 1.
5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA VCE = 3V, IC = 1.
5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 750 750 100 2.
5 2.
8 3 2.
5 2.
5 3 V V V V V V 100 100 100 500 2 Max.
Units V V µA µA µA µA mA ICEO ICBO IEBO hFE Emitter Cut-off Current DC Current Gain : MJE800/802 : MJE801/803 : ALL DEVICES VCE(sat) Collector-Emitter Saturation Voltage : MJE800/802 : MJE801/803 : ALL DEVICES Base-Emitter ON Voltage : MJE800/802 : MJE801/803 : ALL DEVICES VBE(on) ©2001 Fairchild Semiconductor Corporation Rev.
A1, February 2001 MJE800/801/802/803 Typical Characteristics 5 10000 A IB= 500µ VCE = 3V IC(A),COLLECTOR CURRENT 4 IB= 350µ A 3 hFE, DC CURRENT GAIN 5 IB= 450µA IB= 400µ A IB= 300µA IB= 250µA IB= 200µA 1000 IB= 150µ A IB= 100µA 2 100 1 IB= 50µA 0 0 1 2 3 4 10 0.
01 0.
1 1 1...


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