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ML64116R

Mitsubishi
Part Number ML64116R
Manufacturer Mitsubishi
Description FOR OPTICAL INFORMATION SYSTEMS
Published May 7, 2005
Detailed Description MITSUBISHI LASER DIODES ML6XX16 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME DESCRIPTION ML60116R , ML64116R FEAT...
Datasheet PDF File ML64116R PDF File

ML64116R
ML64116R


Overview
MITSUBISHI LASER DIODES ML6XX16 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME DESCRIPTION ML60116R , ML64116R FEATURES • Output 30mW (CW) 40mW (pulse) • Short astigmatic distance • MQW * active layer * : Multiple Quantum Well ML6XX16 is a high power AlGaAs semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 785nm and standard light output of 30mW.
ML6XX16 is produced by the MOCVD crystal growth method which is excellent in mass production and characteristics uniformity.
This is a high -performance, highly reliable, and long life semiconductor laser.
Built-in monitor photodiode APPLICATION Optical disc drive ( rewritable , write once) ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Po VRL VRD IFD Tc Tstg Parameter Light output power Reverse voltage (laser diode) Reverse voltage (Photodiode) Forward current (Photodiode) Case temperature Storage temperature Conditions CW Pulse(Note 2) Ratings 40 50 2 30 10 -40 ~ +60 -55 ~ +100 V V mA Unit mW °C °C Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does not mean the guarantee of its lifetime.
As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance Department.
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1ms ELECTRICAL/OPTICAL CHARACTERISTICS (Case temperature Tc=25°C) Symbol Ith Iop η Vop λp θ// θ⊥ Im Im(Note 3) ID Ct Parameter Threshold current Operation current Slope efficiency Operating voltage Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Monitoring output current (Photodiode) Dark current (Photodiode) Capacitance (Photodiode) CW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW,VRD=1V RL=10Ω (Note 4) VRD=10V VRD=5V 770 8 22 Test conditions Min.
0.
40 Typ.
30 80 0.
55 2.
0 785 10 25 0.
2 0.
5 7 Max 50 110 0.
75 2.
5 800 13 28 0.
5 Unit mA mA mW/mA V nm...


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