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MLN1030S

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Part Number MLN1030S
Manufacturer Advanced
Description NPN SILICON RF POWER TRANSISTOR
Published May 7, 2005
Detailed Description MLN1030S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030S is Designed for PACKAGE STYLE .280 4L STUD A 45...
Datasheet PDF File MLN1030S PDF File

MLN1030S
MLN1030S

Overview
MLN1030S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030S is Designed for PACKAGE STYLE .
280 4L STUD A 45° FEATURES: • • • Omnigold™ Metalization System B D S G S D C J E I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.
250 A 40 V 28 V 3.
5 V 7.
0 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 20 OC/W O O DIM A B C D E F G H I J K F G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.
010 / 25.
65 .
220 / 5.
59 .
270 / 6.
86 .
003 / 0.
08 .
117 / 2.
97 .
572 / 14.
53 .
130 / 3.
30 .
245 / 6.
22 .
640 / 16.
26 .
175 / 4.
45 .
275 / 6.
99 1.
055 / 26.
80 .
230 /5.
84 .
285 / 7.
24 .
007 / 0.
18 .
137 / 3.
48 .
255 / 6.
48 .
217 / 5.
51 .
285 / 7.
24 ORDER CODE: ASI10623 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG IC = 1 mA IC = 1 mA IE = 1 mA VCB = 24 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 40 28 3.
5 0.
5 UNITS V V V mA --pF dB VCE = 5.
0 V VCB = 28 V VCE = 20 V POUT = 1.
0 W IC = 100 mA f = 1.
0 MHz ICQ = 150 mA f = 1.
0 GHz 20 120 5.
0 9.
0 A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


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