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NE661M04-T2

NEC
Part Number NE661M04-T2
Manufacturer NEC
Description NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Published May 7, 2005
Detailed Description DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFIC...
Datasheet PDF File NE661M04-T2 PDF File

NE661M04-T2
NE661M04-T2

Overview
DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.
2 dB, Ga = 16 dB TYP.
@f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP.
@f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.
59 mm) ORDERING INFORMATION Part Number NE661M04 NE661M04-T2 Quantity Loose product (50 pcs) Taping product (3 kpcs/reel) Packaging Style • 8 mm wide emboss taping • 1 pin (emitter), 2 pin (collector) feed hole direction Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 15 3.
3 1.
5 12 39 150 –65 to +150 Unit V V V mA mW °C °C Tj Tstg Note TA = +25°C (free air) THERMAL RESISTANCE Item Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Value 240 650 Unit °C/W °C/W Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
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Document No.
P14909EJ1V0DS00 (1st edition) Date Published June 2000 N CP(K) Printed in Japan © 2000 NE661M04 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Reverse Transfer Capacitance Gain Bandwidth Product Noise Figure Insertion Power Gain Maximum Stable Power Gain Outp...


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