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NE722S01

NEC
Part Number NE722S01
Manufacturer NEC
Description NECs C TO X BAND N-CHANNEL GaAs MES FET
Published May 7, 2005
Detailed Description NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz • OUTPUT POWER...
Datasheet PDF File NE722S01 PDF File

NE722S01
NE722S01

Overview
NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz • LOW NOISE/HIGH GAIN: NF = 0.
9 dB TYP, Ga = 12 dB TYP at f = 4 GHz • GATE LENGTH: LG = 0.
8 µm (recessed gate) • GATE WIDTH: WG = 400 µm 2 OUTLINE DIMENSION (Units in mm) PACKAGE OUTLINE SO1 2.
0 ± 0.
2 1 2.
0 ± 0.
2 DESCRIPTION NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band.
The device features a 0.
8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance and uniformity.
This device's low phase noise and high fT makes it a excellent choice for oscillator applications on a digital LNB (Low Noise Block).
The NE722S01 is housed in a low cost plastic package which is available in Tape and Reel.
NEC's stringent quality assurance and test procedures ensure the highest reliability performance.
0.
125 ± 0.
05 P 3 0.
65 TYP 1.
9 ± 0.
2 1.
6 4 0.
5 TYP 2.
0±0.
2 1.
Source 2.
Drain 3.
Source 4.
Gate 1.
5 MAX 0.
4 MAX 4.
0 ± 0.
2 APPLICATIONS • C to X band low noise amplifiers • C to X band oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS IGSO IDSS VGS gm GS P1dB NF Ga PARAMETERS AND CONDITIONS Gate to Source Leak Current, VGS = -5 V Saturated Drain Current, VDS = 3 V, VGS = 0 V Gate to Source Cutoff Voltage, VDS = 3 V, ID = 100 µA Transconductance, VDS = 3 V, IDS = 30 mA Power Gain, VDS = 3 V, IDS = 30 mA, f = 12 GHz Output Power at 1 dB Gain Compression Point at VDS = 3 V, IDS = 30 mA, f = 12 GHz Noise Figure, VDS = 3 V, IDS = 10 mA, f = 4 GHz Associated Gain, VDS = 3 V, IDS = 10 mA, f = 4 GHz UNITS uA mA V mS dB dBm dB dB – – MIN – 60 -0.
5 20 – NE722S01 S01 TYP 1.
0 90 – 45 6 15.
0 0.
9 12 – _ MAX 10 120 -4.
0 – – California Eastern Laboratories NE722S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGS VGD IDS PT PIN TCH TSTG PARAMETER...


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