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NE850R599A

NEC
Part Number NE850R599A
Manufacturer NEC
Description C-BAND MEDIUM POWER GaAs MESFET
Published May 7, 2005
Detailed Description C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES • HIGH OUTPUT POWER: 0.5 W • HIGH LINEAR GAIN: 9.5 dB • HIGH EFFICI...
Datasheet PDF File NE850R599A PDF File

NE850R599A
NE850R599A

Overview
C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES • HIGH OUTPUT POWER: 0.
5 W • HIGH LINEAR GAIN: 9.
5 dB • HIGH EFFICIENCY (PAE): 38% • SUPERIOR INTERMODULATION DISTORTION • INDUSTRY STANDARD PACKAGING OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 99 5.
2±0.
3 1.
0±0.
1 4.
0 MIN BOTH LEADS Gate φ2.
2±0.
2 4.
0±0.
1 Source 4.
3±0.
2 DESCRIPTION The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices.
The device has no internal matching and can be used at frequencies from UHF to 8.
5 GHZ.
Equivalent performance in a chip package can be obtained by using only 1 cell of the NE8500100 chip.
The chips used in this series offer superio...


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