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NEL2035F03-24

Part Number	NEL2035F03-24
Manufacturer	NEC
Description	NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
Published	May 7, 2005
Detailed Description	DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION...
Datasheet	NEL2035F03-24 PDF File

Overview

DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2035F03-24 of NPN epitaxial microwave power transistors is designed for 1.
8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.
OUTLINE DIMENSIONS (Unit: mm) 2.
8 ±0.
2 2 × φ 3.
3 ±0.
3 6.
35 ±0.
4 1.
53 ±0.
3 1 FEATURES • High Linear Power and Gain • Low Internal Modulation Distortion • High Reliability Gold Metallization • Emitter Ballasting • 24 V Operation 3 2.
17 ±0.
3 0.
1 +0.
05 –0.
02 1 - EMITTER 2 - BASE 3 - COLLECTOR ABSOLUTE MAXIMUM RATING (TA = 25 ˚C)...

Similar Datasheet

NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier - NEC

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